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STP3NB90FP Arkusz danych(PDF) 1 Page - STMicroelectronics

Numer części STP3NB90FP
Szczegółowy opis  N - CHANNEL 900V - 4 ohm - 3.5 A - TO-220/TO-220FP PowerMESH MOSFET
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP3NB90FP Arkusz danych(HTML) 1 Page - STMicroelectronics

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STP3NB90
STP3NB90FP
N - CHANNEL 900V - 4
Ω - 3.5 A - TO-220/TO-220FP
PowerMESH
™ MOSFET
TARGET DATA
s
TYPICAL RDS(on) = 4
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced
family
of
power
MOSFETs
with
outstanding
performances.
The
new
patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
®
INTERNAL SCHEMATIC DIAGRAM
October 1998
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP4NB90
STP4NB90FP
VDS
Drain-source Voltage (VGS = 0)
900
V
VDGR
Drain- gate Voltage (RGS = 20 k
Ω)
900
V
VGS
Gate-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc = 25
oC
3.5
3.5(**)
A
ID
Drain Current (continuous) at Tc = 100
oC
2.2
1.26(*)
A
IDM
Drain Current (pulsed)
14
14
A
Ptot
Total Dissipation at Tc = 25
o C
100
35
W
Derating Factor
0.8
0.28
W/
o C
dv/dt(1)
Peak Diode Recovery voltage slope
4.5
4.5
V/ns
VISO
Insulation Withstand Voltage (DC)
2000
V
Tstg
Storage Temperature
-65 to 150
o C
Tj
Max. Operating Junction Temperature
150
o C
(*) Pulse width limited by safe operating area
(1) ISD
≤ 3.5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (**) Limited only TJMAX
TYPE
VDSS
RDS(on)
ID
STP3NB90
STP3NB90FP
900 V
900 V
< 4.2
< 4.2
3.5 A
3.5 A
1/6


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