STP45N10FI datasheet(2/10 Pages) STMICROELECTRONICS

Numer części	STP45N10FI

Szczegółowy opis	N - CHANNEL 100V - 0.027ohm - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR

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THERMAL DATA

TO220

ISOWATT220

Rthj-case

Thermal Resistance Junction-case

Max

1

3.33

oC/W

Rthj-amb

Rthc-sink

Tl

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

62.5

0.5

300

oC/W

oC

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max,

δ < 1%)

45

A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25

oC, ID = IAR, VDD = 25 V)

400

mJ

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250

µA

VGS = 0

100

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating x 0.8

Tc = 125

oC

10

1

50

µA

IGSS

Gate-Source Leakage

Current (VDS = 0)

VGS =

± 20 V

± 100

mA

ON (

∗)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold

Voltage

VDS = VGS

ID = 250

µA

23

4

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 22.5 A

VGS = 10 V

ID = 22.5 A Tc = 100

o C

0.027

0.035

0.07

Ω

ID(on)

On State Drain Current VDS > ID(on) x RDS(on)max

VGS = 10 V

45

A

DYNAMIC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (

∗)

Forward

Transconductance

VDS > ID(on) x RDS(on)max

ID = 22.5 A

20

40

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25 V

f = 1 MHz

VGS = 0

4100

600

150

5200

800

220

pF

STP45N10/FI

2/10

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