TC3967 datasheet(1/2 Pages) TRANSCOM

Numer części	TC3967

Szczegółowy opis	2 W Packaged Single-Bias PHEMT GaAs Power FETs

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Producent	TRANSCOM [Transcom, Inc.]

Strona internetowa	http://www.transcominc.com.tw

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TC3967

REV2_20080516

TRANSCOM, INC., 90 Dasoong 7

th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

P 1 / 2

2 W Packaged Single-Bias PHEMT GaAs Power FETs

FEATURES

•

2W Typical Output Power

•

13dB Typical Linear Power Gain at 2.45GHz

•

High Linearity: IP3 = 43 dBm Typical

•

High Power Added Efficiency: Nominal PAE of 35%

•

Breakdown Voltage: BVDGO

≥ 15V

•

Wg = 5 mm

•

100 % DC Tested

•

Suitable for High Reliability Application

•

Lost Cost Ceramic Package

DESCRIPTION

The TC3967 is a self-bias Cu-based ceramic packaged device with TC1601N PHEMT GaAs FETs, which is

designed to provide the single power supply. The Cu-based ceramic package provides excellent thermal

conductivity for the GaAs FET. The device is suitable for oscillator and power amplifiers in a wide range of

commercial application. All devices are 100% DC tested to assure consistent quality.

ELECTRICAL SPECIFICATIONS (@ 2.45 GHz)

Symbol

CONDITIONS

MIN

TYP

MAX

UNIT

P1dB

Output Power at 1dB Gain Compression Point VDS = 8 V

32

33

dBm

GL

Linear Power Gain VDS = 8 V

13

dB

IP3

Intercept Point of the 3

rd-order Intermodulation V

DS = 8 V, *PSCL = 20 dBm

43

dBm

PAE

Power Added Efficiency at 1dB Compression Power

35

%

IDS

Drain-Source Current at VDS = 8 V

600

mA

BVDGO

Drain-Gate Breakdown Voltage at IDGO = 1.2mA

15

18

Volts

Rth

Thermal Resistance

8

°C/W

Note: *PSCL: Output Power of Single Carrier Level.

PHOTO ENLARGEMENT

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