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STP6NC90ZFP Arkusz danych(PDF) 1 Page - STMicroelectronics |
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1 / 13 page 1/13 July 2002 STP6NC90Z - STP6NC90ZFP STB6NC90Z - STB6NC90Z-1 N-CHANNEL 900V - 1.55 Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET s TYPICAL RDS(on) = 1.55Ω s EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES s 100% AVALANCHE TESTED s VERY LOW GATE INPUT RESISTANCE DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to- back Zener diodes between gate and source. Such ar- rangement gives extra ESD capability with higher rug- gedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STP6NC90Z STP6NC90ZFP STB6NC90Z STB6NC90Z-1 900 V 900 V 900 V 900 V < 1.9 Ω < 1.9 Ω < 1.9 Ω < 1.9 Ω 5.4 A 5.4 A 5.4 A 5.4 A Symbol Parameter Value Unit STP(B)6NC90Z(-1) STP6NC90ZFP VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 900 V VGS Gate- source Voltage ± 25 V ID Drain Current (continuos) at TC = 25°C 5.4 5.4(*) A ID Drain Current (continuos) at TC = 100°C 3.43 3.43(*) A IDM (1) Drain Current (pulsed) 21 21 A PTOT Total Dissipation at TC = 25°C 135 40 W Derating Factor 1.08 0.32 W/°C IGS Gate-source Current ±50 mA VESD(G-S) Gate source ESD(HBM-C=100pF, R=15K Ω) 3KV dv/dt Peak Diode Recovery voltage slope 3 V/ns VISO Insulation Withstand Voltage (DC) -- 2000 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (1)ISD ≤5.4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2).Limited only by maximum temperature allowed TO-220 1 2 3 TO-220FP 1 2 3 I²PAK (Tabless TO-220) 1 3 D²PAK |
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