STP80NE06-10 datasheet(1/8 Pages) STMICROELECTRONICS

Numer części	STP80NE06-10

Szczegółowy opis	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

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STP80NE06-10

N - CHANNEL ENHANCEMENT MODE

” SINGLE FEATURE SIZE

™ ” POWER MOSFET

s

TYPICAL RDS(on) = 0.0085

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of

SGS-THOMSON unique ”Single Feature Size

™ ”

strip-based

process. The resulting transistor

shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a

remarkable manufacturing reproducibility.

APPLICATIONS

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT

INTERNAL SCHEMATIC DIAGRAM

February 1998

1

2

3

TO-220

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

VDS

Drain-source Volt age (VGS =0)

60

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

60

V

VGS

Gat e-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

o C80

A

ID

Drain Current (continuous) at Tc =100

oC57

A

IDM(

•)

Drain Current (pulsed)

320

A

Ptot

Tot al Dissipation at Tc =25

oC150

W

Derating F act or

1

W/

oC

dv/dt

Peak Diode Recovery voltage slope

7

V/ ns

Tstg

Storage T emperat ure

-65 to 175

oC

Tj

Max. O perating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤ 80 A,di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

ST P80NE06-10

60 V

<0. 01

Ω

80 A

1/8

Podobny numer części - STP80NE06-10

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VBsemi Electronics Co.,...	STP80NE06-10	998Kb / 7P	N-Channel 60 V (D-S) MOSFET

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