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FDC855N Arkusz danych(PDF) 4 Page - Fairchild Semiconductor |
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FDC855N Arkusz danych(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page www.fairchildsemi.com 4 ©2008 Fairchild Semiconductor Corporation FDC855N Rev.C Figure 7. 03 69 12 0 2 4 6 8 10 ID = 6.1A VDD = 20V VDD = 10V Qg, GATE CHARGE(nC) VDD = 15V Gate Charge Characteristics Figure 8. 0.1 1 10 100 1000 20 f = 1MHz VGS = 0V VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss 30 Capacitance vs Drain to Source Voltage Figure 9. Forward Bias Safe Operating Area 0.01 0.1 1 10 100 0.01 0.1 1 10 30 DC 1s 1ms 100ms 10ms 100µs VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED RθJA = 156 oC/W TA = 25 oC Figure 10. 10 -3 10 -2 10 -1 110 100 1000 1 10 100 SINGLE PULSE RθJA = 156 oC/W TA = 25 oC 0.5 V GS = 10V t, PULSE WIDTH (s) Single Pulse Maximum Power Dissipation Figure 11. Transient Thermal Response Curve 10 -3 10 -2 10 -1 110 100 1000 0.01 0.1 1 SINGLE PULSE RθJA = 156 o C/W DUTY CYCLE-DESCENDING ORDER t, RECTANGULAR PULSE DURATION (sec) D = 0.5 0.2 0.1 0.05 0.02 0.01 2 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA Typical Characteristics T J = 25°C unless otherwise noted |
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