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FDS6690AS Arkusz danych(PDF) 6 Page - Fairchild Semiconductor

Numer części FDS6690AS
Szczegółowy opis  30V N-Channel PowerTrench짰 SyncFET?
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6690AS Arkusz danych(HTML) 6 Page - Fairchild Semiconductor

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FDS6690AS Rev A2(X)
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky
diode in parallel with PowerTrench MOSFET.
This diode exhibits similar characteristics to a
discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery
characteristic of the FDS6690AS.
Figure 12. FDS6690AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the
reverse recovery characteristics of the body diode
of an equivalent size MOSFET produced without
SyncFET (FDS6690A).
Figure 13. Non-SyncFET (FDS6690A)
body diode reverse recovery
characteristic.
Schottky barrier diodes exhibit significant leakage
at high temperature and high reverse voltage.
This will increase the power in the device.
0.000001
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
TA = 125
oC
TA = 25
oC
TA = 100
oC
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
10nS/DIV
10nS/DIV
0V


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