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FDS6982AS Arkusz danych(PDF) 3 Page - Fairchild Semiconductor |
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FDS6982AS Arkusz danych(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page FDS6982AS Rev B1 Electrical Characteristics (continued) T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Switching Characteristics (Note 2) Qg(TOT) Total Gate Charge at Vgs=10V Q2 Q1 21 11 30 15 nC Qg Total Gate Charge at Vgs=5V Q2 Q1 12 6 16 9 nC Qgs Gate–Source Charge Q2 Q1 3.1 1.8 nC Qgd Gate–Drain Charge Q2: VDS = 15 V, ID = 11.5A Q1: VDS = 15 V, ID = 6.3A Q2 Q1 3.6 2.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current Q2 Q1 3.0 1.3 A Trr Reverse Recovery Time 19 ns Qrr Reverse Recovery Charge IF = 11.5 A, diF/dt = 300 A/µs (Note 3) Q2 12 nC Trr Reverse Recovery Time 20 ns Qrr Reverse Recovery Charge IF = 6.3 A, diF/dt = 100 A/µs (Note 3) Q1 9 nC VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3 A (Note 2) VGS = 0 V, IS = 6 A (Note 2) VGS = 0 V, IS = 1.3 A (Note 2) Q2 Q2 Q1 0.5 0.6 0.8 0.7 1.0 1.2 V Notes: 1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. 4 5 |
Podobny numer części - FDS6982AS_08 |
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Podobny opis - FDS6982AS_08 |
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