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STPIC6C595 Arkusz danych(PDF) 4 Page - STMicroelectronics |
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STPIC6C595 Arkusz danych(HTML) 4 Page - STMicroelectronics |
4 / 14 page STPIC6C595 4/14 DC CHARACTERISTICS (VCC=5V, TC= 25°C, unless otherwise specified.) SWITCHING CHARACTERISTICS (VCC=5V, TC= 25°C, unless otherwise specified.) Note 1: All Voltage value are with respect to GND Note 2: Each power DMOS source is internally connected to GND Note 3: Pulse duration ≤ 100µs and duty cycle ≤ 2% Note 4: Drain Supply Voltage = 15V, starting junction temperature (TJS) = 25°C. L = 1.5H and IAS = 200mA (See Fig. 11 and 12) Note 5: Technique should limit TJ -TC to 10°C maximum Note 6: These parameters are measured with voltage sensing contacts separate from the current-carrying contacts. Note 7: Nominal Current is defined for a consistent comparison between devices from different sources. It is the current that produces a voltagedropof 0.5V at TC =85°C. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSX Drain-to-Source breakdown Voltage ID = 1mA 33 37 V VSD Source-to-Drain Diode Forward Voltage IF = 100 mA 0.85 1.2 V VOH High Level Output Voltage SER OUT IOH =-20 µAVCC = 4.5V 4.4 4.49 V IOH =-4mA VCC = 4.5V 4 4.2 V VOL Low Level Output Voltage SER OUT IOH =20 µAVCC = 4.5V 0.005 0.1 V IOH = 4 mA VCC = 4.5V 0.3 0.5 V IIH High Level Input Current VCC = 5.5V VI =VCC 1 µA IIL Low Level Input Current VCC = 5.5V VI =0 -1 µA ICC Logic Supply Current VCC = 5.5V All outputs OFF or ON 20 200 µA ICC(FRQ) Logic Supply Current at Frequency fSRCK = 5MHz CL = 30pF All outputs OFF (See Figg. 6, 18 and 19) 0.2 2 mA IN Nominal Current VDS(on) = 0.5V IN =ID TC=85°C (See Note 5, 6, 7) 90 mA IDSX Off-State Drain Current VDS = 30V VCC = 5.5V 0.3 5 µA VDS = 30V VCC =5.5V or 0V TC=125°C 0.6 8 µA RDS(on) Static Drain Source ON State Resistance (See Note 5, 6 and figg. 14, 16) ID = 50mA VCC = 4.5V 4.5 6 Ω ID = 50mA VCC = 4.5V TC=125°C 6.5 9 Ω ID = 100mA VCC = 4.5V 4.5 6 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit tPHL Propagation Dealy Time, High to Low Level Output from G CL =30pF ID = 75mA (See Figg. 4, 5, 6,7, 20) 80 ns tPLH Propagation Dealy Time, Low to High Level Output from G 130 ns tr Rise Time, Drain Output 60 ns tf Fall Time, Drain Output 50 ns tpd propagation Delay Time 20 ns ta Reverse Recovery Current Rise Time IF = 100mA di/dt = 10A/ µs (See Note 5, 6 and Fig. 9 and 10) 39 ns trr Reverse Recovery Time 115 ns |
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