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Zakładka z wyszukiwarką danych komponentów |
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STPS160H100TV Arkusz danych(PDF) 2 Page - STMicroelectronics |
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STPS160H100TV Arkusz danych(HTML) 2 Page - STMicroelectronics |
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2 / 5 page  STPS160H100TV 2/5 Symbol Parameter Value Unit Rth (j-c) Junction to case Per leg 0.9 °C/W Total 0.5 °C/W Rth (c) Coupling 0.14 °C/W THERMAL RESISTANCES Symbol Parameter Tests Conditions Min. Typ. Max. Unit IR * Reverse leakage Current Tj = 25 °CVR =VRRM 40 µA Tj = 125 °C13 50 mA VF** Forward Voltage drop Tj = 25 °CIF = 60 A 0.75 V Tj = 125 °CIF = 60 A 0.59 0.63 Tj=25 °CIF = 80 A 0.80 Tj = 125 °CIF = 80 A 0.63 0.68 Tj=25 °CIF = 120 A 0.87 Tj = 125 °CIF = 120 A 0.69 0.74 Tj=25 °CIF = 160 A 0.92 Tj = 125 °CIF = 160 A 0.75 0.80 STATIC ELECTRICAL CHARACTERISTICS (per diode) Pulse test : * tp=5ms, δ <2% ** tp = 380 µs, δ <2% To evaluate the conduction losses use the following equation : P=0.56xIF(AV) + 0.0015 x IF 2 (RMS) When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) |
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