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STB10NK60Z-1 Arkusz danych(PDF) 6 Page - STMicroelectronics

Numer części STB10NK60Z-1
Szczegółowy opis  N-channel 600V - 0.65廓 - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH??Power MOSFET
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB10NK60Z-1 Arkusz danych(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STB10NK60Z - STB10NK60Z-1 - STP10NK60Z/FP - STW10NK60Z
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Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=300 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
20
20
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=300 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
55
30
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD=480 V, ID=8A,
RG=4.7Ω, VGS=10V
(see Figure 20)
18
18
36
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
10
36
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD=10A, VGS=0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=8A, di/dt = 100A/µs,
VDD=40 V, Tj=150°C
570
4.3
15
ns
µC
A
Table 8.
Gate-source zener diode
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
BVGSO
(1)
1.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
Gate-source breakdown
voltage
Igs=± 1mA (open drain)
30
V


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