STF12NM50N datasheet(5/19 Pages) STMICROELECTRONICS

Numer części	STF12NM50N

Szczegółowy opis	N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

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Producent	STMICROELECTRONICS [STMicroelectronics]

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5 / 19 page

STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N

Electrical characteristics

5/19

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD=250 V, ID= 5.5 A,

RG=4.7 Ω, VGS=10 V

(see Figure 16)

15

60

14

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

ISD

Source-drain current

11

A

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

44

A

VSD

(2)

2.

Pulsed: pulse duration=300 µs, duty cycle 1.5%

Forward on voltage

ISD=11 A, VGS=0

1.3

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=11 A, VDD=100 V

di/dt = 100 A/µs,

(see Figure 18)

340

3.5

20

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=11 A,

di/dt = 100 A/µs,

VDD=100 V, Tj=150 °C

(see Figure 18)

420

4

20

ns

µC

A

Podobny numer części - STF12NM50N

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	STF12NM50N	510Kb / 18P	N-channel 500V - 0.29廓 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh??Power MOSFET
STMicroelectronics	STF12NM50ND	1Mb / 16P	N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP
Inchange Semiconductor ...	STF12NM50ND	310Kb / 2P	isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	STF12NM50ND	1Mb / 8P	Power MOSFET

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Podobny opis - STF12NM50N

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	STB16NM50N	554Kb / 18P	N-channel 500 V - 0.21 廓 - 15 A MDmesh??II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP
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