©2008 Fairchild Semiconductor Corporation

www.fairchildsemi.com

6N13XM, HCPLXXXM Rev. 1.0.1

2

PRELIMINARY

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Notes:

1.

Derate linearly above 70°C free-air temperature at a rate of 0.8mA/°C.

2.

Derate linearly above 70°C free-air temperature at a rate of 1.6mA/°C.

3.

Derate linearly above 70°C free-air temperature at a rate of 0.9 mW/°C.

4.

Derate linearly above 70°C free-air temperature at a rate of 2.0 mW/°C.

Symbol

Parameter

Condition

Value

Units

Storage Temperature

-40 to +125

°C

Operating Temperature

-40 to +100

°C

Lead Solder Temperature

(Wave)

260 for 10 sec

°C

EMITTER

DC/Average Forward Input

25

mA

Peak Forward Input Current

50% duty cycle, 1ms P.W.

50

mA

Each Channel

≤1µs P.W., 300pps

1.0

A

Reverse Input Voltage Each

Channel

5V

Input Power Dissipation Each

Channel

6N135M, 6N136M, HCPL2503M,

HCPL4502M, HCPL4503M

100

mW

45

DETECTOR

Average Output Current Each

Channel

8

mA

Peak Output Current Each

Channel

16

mA

Emitter-Base Reverse Voltage

6N135M, 6N136M and HCPL2503M only

5

V

Supply Voltage

-0.5 to 30

V

Output Voltage

-0.5 to 20

V

Base Current

6N135M, 6N136M and HCPL2503M only

5

mA

PD

Output Power Dissipation

Each Channel

6N135M, 6N136M, HCPL2503M,

100

mW

HCPL2530M, HCPL2531M

35

mW