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2SC1214CTZ-E Arkusz danych(PDF) 2 Page - Renesas Technology Corp |
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2SC1214CTZ-E Arkusz danych(HTML) 2 Page - Renesas Technology Corp |
2 / 5 page 2SC1214 Rev.2.00 Aug 10, 2005 page 2 of 4 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 50 — — V IC = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 50 — — V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 4 — — V IE = 10 µA, IC = 0 Collector cutoff current ICBO — — 0.5 µA VCB = 20 V, IE = 0 DC current transfer ratio hFE* 1 60 — 320 VCE = 3 V, IC = 10 mA hFE 10 — — VCE = 3 V, IC = 500 mA (pulse test) Collector to emitter saturation voltage VCE(sat) — 0.2 0.6 V IC = 150 mA, IB = 15 mA (Pulse test) Base to emitter voltage VBE — 0.64 — V VCE = 3 V, IC = 10 mA Note: 1. The 2SC1214 is grouped by hFE as follows. B C D 60 to 120 100 to 200 160 to 320 |
Podobny numer części - 2SC1214CTZ-E |
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Podobny opis - 2SC1214CTZ-E |
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