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STB21NM60N Arkusz danych(PDF) 5 Page - STMicroelectronics

Numer części STB21NM60N
Szczegółowy opis  N-channel 600 V - 0.17 廓 - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh??Power MOSFET
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB21NM60N Arkusz danych(HTML) 5 Page - STMicroelectronics

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STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Electrical characteristics
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Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
17
68
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage
ISD = 17 A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, VDD = 100 V
di/dt=100 A/µs
(see Figure 20)
372
4.6
25
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A,VDD = 100 V
di/dt=100 A/µs,
Tj = 150 °C
(see Figure 20)
486
6.3
26
ns
µC
A


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