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2SJ554 Arkusz danych(PDF) 4 Page - Renesas Technology Corp |
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2SJ554 Arkusz danych(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SJ554 Rev.4.00 Sep 07, 2005 page 4 of 7 0.10 –40 0 40 80 120 160 Case Temperature Tc (°C) 0 0.02 0.04 0.06 0.08 Static Drain to Source on State Resistance vs. Temperature Pulse Test ID = –50 A ID = –45 A –10 A, –20 A Forward Transfer Admittance vs. Drain Current Drain Current ID (A) 100 30 3 10 0.3 1 0.1 –0.1 –0.3 –1 –3 –30 –10 –100 Tc = –25°C 75°C VDS = –10 V Pulse Test 25°C Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time 0.1 0.3 1 3 10 30 100 1000 500 100 200 50 10 20 di / dt = 50 A / µs VGS = 0, Ta = 25°C 0 –10 –20 –30 –40 –50 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 10000 1000 3000 300 30 100 10 Ciss Coss Crss VGS = 0 f = 1 MHz 0 0 Gate Charge Qg (nc) 0 –20 –16 –12 –8 –4 –100 –80 –60 –40 –20 Dynamic Input Characteristics 40 80 120 160 200 VDS VGS 1000 100 200 500 50 20 10 –0.3 –1 –3 –30 –10 –100 –0.1 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics VDD = –10 V –25 V –50 V VDD = –50 V –25 V –10 V –10 V VGS = –4 V –20 A –50 A –10 A VGS = –10 V, VDD = –30 V PW = 5 µs, duty ≤ 1 % |
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