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2SK1070PIDTL-E Arkusz danych(PDF) 2 Page - Renesas Technology Corp |
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2SK1070PIDTL-E Arkusz danych(HTML) 2 Page - Renesas Technology Corp |
2 / 5 page 2SK1070 Rev.2.00, Mar.14.2005, page 2 of 4 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Gate cutoff current IGSS — — –10 nA VGS = –15 V, VDS = 0 Gate to source breakdown voltage V(BR)GSS –22 — — V IG = –10 µA, VDS = 0 Drain current IDSS* 1 12 — 40 mA VDS = 5 V, VGS = 0, Pulse test Gate to source cutoff voltage VGS(off) 0 — –2.5 V VDS = 5 V, ID = 10 µA Forward transfer admittance |yfs| 20 30 — mS VDS = 5 V, VGS = 0, f = 1 kHz Input capacitance Ciss — 9 — pF VDS = 5 V, VGS = 0, f = 1 MHz Notes: 1. The 2SK1070 is grouped by IDSS as follows. Grade C D E Mark PIC PID PIE IDSS 12 to 22 18 to 30 27 to 40 Main Characteristics Typical Transfer Characteristics Gate to Source Voltage VGS (V) 20 16 12 8 4 0 –1.25 –1.0 –0.5 –0.25 0 –0.75 VDS = 5 V Forward Transfer Admittance vs. Drain Current Drain Current ID (mA) VDS = 5 V f = 1 kHz 100 10 1.0 0.1 0.1 1.0 10 100 0 50 100 150 Ambient Temperature Ta (ºC) 150 100 50 Maximum Channel Dissipation Curve Typical Output Characteristics Drain to Source Voltage VDS (V) 20 16 12 8 4 02 6 8 10 4 VGS = 0 V –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 |
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