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2SK1697 Arkusz danych(PDF) 1 Page - Renesas Technology Corp

Numer części 2SK1697
Szczegółowy opis  Silicon N-Channel MOS FET
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK1697 Arkusz danych(HTML) 1 Page - Renesas Technology Corp

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Rev.2.00 May 11, 2006 page 1 of 6
2SK1697
Silicon N-Channel MOS FET
REJ03G1373-0200
(Previous: ADE-208-1313)
Rev.2.00
May 11, 2006
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source.
• Suitable for DC – DC converter, motor drive, power switch, solenoid drive
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK
)
R
4
3
2
1
D
G
S
1. Gate
2. Drain
3. Source
4. Drain
Note:
Marking is “EY”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
0.5
A
Drain peak current
ID(pulse)
*1
1.5
A
Body to drain diode reverse drain current
IDR
0.5
A
Channel dissipation
Pch
*2
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. When using the alumina ceramic board (12.5
× 20 × 0.7 mm)


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