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2SK1772 Arkusz danych(PDF) 4 Page - Renesas Technology Corp |
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2SK1772 Arkusz danych(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1772 Rev.2.00 Sep 07, 2005 page 4 of 6 2.0 1.6 1.2 0.8 0.4 –40 0 40 80 120 160 Case Temperature TC (°C) Pulse test 1 A 2 A 0 VGS = 10 V VGS = 4 V I = 0.5 A, 1 A D 2 A 0.5 A Static Drain to Source on State Resistance vs. Temperature 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.05 0.1 0.2 0.5 1.0 2.0 Drain Current ID (A) 75 °C –25 °C Tc = 25 °C VDS = 10 V Pulse test Forward Transfer Admittance vs. Drain Current 500 200 100 50 20 10 5 0.02 0.05 0.1 0.2 0.5 1.0 2.0 Reverse Drain Current IDR (A) di/dt = 50 A/ µs VGS = 0 Ta = 25 °C Body-Drain Diode Reverse Recovery Time 1000 100 10 1 010 20 30 40 50 Drain to Source Voltage VDS (V) Coss Ciss Crss VGS= 0 f = 1 MHz Typical Capacitance vs. Drain to Source Voltage 50 40 30 20 10 0 0.8 1.6 2.4 3.2 4.0 Gate Charge Qg (nc) ID = 1 A VGS VDS VDD = 5 V 10 V 20 V VDD = 5 V 10 V 20 V 20 16 12 8 4 0 Dynamic Input Characteristics 500 200 100 50 20 10 5 0.02 0.05 0.1 0.2 0.5 1.0 2.0 Drain Current ID (A) tr tf td(off) VGS = 10 V VDD = 30 V PW = 2 µs duty 1 % td(on) Switching Characteristics ≤ |
Podobny numer części - 2SK1772 |
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Podobny opis - 2SK1772 |
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