2SK1880 datasheet(4/8 Pages) RENESAS

Numer części	2SK1880

Szczegółowy opis	Silicon N Channel MOS FET

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Producent	RENESAS [Renesas Technology Corp]

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4 / 8 page

2SK1880(L), 2SK1880(S)

Rev.2.00 Sep 07, 2005 page 4 of 7

Case Temperature TC (°C)

Static Drain to Source on State

Resistance vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance

vs. Drain Current

Body to Drain Diode Reverse

Recovery Time

Reverse Drain Current IDR (A)

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge Qg (nc)

Dynamic Input Characteristics

Drain Current ID (A)

Switching Characteristics

20

16

12

8

4

I = 1 A

D

–40

0.5 A

0

40

80

120

160

Tc = –25

°C

75

°C

5

2

1

0.5

0.2

0.1

0.05

25

°C

Pulse Test

V

= 20 V

DS

0.02

0.05

0.1

0.2

0.5

1

2

di/dt = 100 A/ s

V

= 0

Ta = 25

°C

Pulse Test

5000

0.1

0.2

0.5

1

2

5

10

GS

µ

2000

1000

500

200

100

50

1000

100

10

1

Ciss

Coss

Crss

V

= 0

f = 1 MHz

GS

010

20

30

40

50

1000

800

600

400

200

20

16

12

8

4

0

I = 1.5 A

D

V

= 100 V

250 V

400 V

DD

04

8

12

16

20

V

= 100 V

250 V

400 V

DD

VGS

VDS

500

200

100

50

20

10

5

0.1

0.2

0.5

1

2

5

10

VGS = 10 V, VDD = 30 V

PW = 2

µs, duty ≤ 1 %

tf

tr

td(off)

td(on)

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