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2SK2590 Arkusz danych(PDF) 2 Page - Renesas Technology Corp |
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2SK2590 Arkusz danych(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SK2590 Rev.3.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS ±20 V Drain current ID 7 A Drain peak current ID(pulse)* 1 28 A Body to drain diode reverse drain current IDR 7 A Channel dissipation Pch* 2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 200 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 250 µA VDS =160 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) — 0.33 0.45 Ω ID = 4 A, VGS = 10 V* 1 Forward transfer admittance |yfs| 3.0 4.5 — S ID = 4 A, VDS = 10 V* 1 Input capacitance Ciss — 700 — pF Output capacitance Coss — 260 — pF Reverse transfer capacitance Crss — 45 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 20 — ns Rise time tr — 45 — ns Turn-off delay time td(off) — 50 — ns Fall time tf — 35 — ns ID = 4 A, VGS = 10 V, RL = 7.5 Ω Body to drain diode forward voltage VDF — 1.1 — V IF = 7 A, VGS = 0 Body to drain diode reverse recovery time trr — 150 — ns IF = 7 A, VGS = 0, diF / dt = 100 A / µs Note: 3. Pulse Test |
Podobny numer części - 2SK2590 |
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Podobny opis - 2SK2590 |
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