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2SK2596BXTL-E Arkusz danych(PDF) 1 Page - Renesas Technology Corp |
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2SK2596BXTL-E Arkusz danych(HTML) 1 Page - Renesas Technology Corp |
1 / 10 page REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Page 1 of 9 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. (f = 836.5 MHz) • Compact package capable of surface mounting Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 1. Gate 2. Source 3. Drain 4. Source 3 1 2, 4 Note: Marking is “BX”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 17 V Gate to source voltage VGSS ±10 V Drain current ID 0.4 A Drain peak current ID(pulse) Note1 1 A Channel dissipation Pch Note2 3 W Channel temperature Tch 150 °C Storage temperature Tstg –45 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C This device is sensitive to electro static discharge. An adequate careful handling procedure is requested. |
Podobny numer części - 2SK2596BXTL-E |
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Podobny opis - 2SK2596BXTL-E |
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