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2SK3378 Arkusz danych(PDF) 3 Page - Renesas Technology Corp

Numer części 2SK3378
Szczegółowy opis  Silicon N Channel MOS FET High Speed Switching
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK3378 Arkusz danych(HTML) 3 Page - Renesas Technology Corp

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2SK3378
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
Page 3 of 6
Main Characteristics
0.5
0.4
0.3
0.2
0.1
0
24
68
10
500
400
300
200
100
0
2468
10
400
300
200
100
0
50
100
150
200
VGS = 3V
Tc =
25
°C
75
°C
Pulse Test
VDS = 10 V
Pulse Test
PW = 10 ms
(1 shot)
6 V
4 V
8 V
7 V
25
°C
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
Ambient Temperature Ta (
°C)
*Value on the alumina ceramic boad.(12.5x20x0.7mm)
Power vs. Temperature Derating
5 V
10
µs
100
µs
1 ms
2.0
1.6
1.2
0.8
0.4
0
24
6
8
10
0.1
0.5
0.2
50
20
10
2
5
1.0
0.5
1.0
ID = 100mA
50 mA
Pulse Test
VGS = 4V
10 V
Pulse Test
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
10 mA
0.1
1
10
50
5
1.0
0.1
0.01
0.001
DC
Operation
0.0005
0.002
0.005
0.02
0.05
0.2
0.5
2
0.05
0.2
0.5
2
5
20
Ta = 25
°C
Operation in
this area is limited
by RDS(on)


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