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2SK3446TZ-E Arkusz danych(PDF) 2 Page - Renesas Technology Corp

Numer części 2SK3446TZ-E
Szczegółowy opis  Silicon N Channel Power MOS FET Power Switching
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK3446TZ-E Arkusz danych(HTML) 2 Page - Renesas Technology Corp

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2SK3446
Rev.8.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
150
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
1
A
Drain peak current
ID (pulse)
Note 1
4
A
Body-drain diode reverse drain current
IDR
1
A
Channel dissipation
Pch
Note 2
0.9
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Ta = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
150
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±10
V
IG =
±100 µA, VDS = 0
Gate to source leak current
IGSS
±10
µA
VGS =
±8 V, VDS = 0
Zero gate voltage drain current
IDSS
1
µA
VDS = 150 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
0.5
1.5
V
VDS = 10 V, ID = 1 mA
RDS (on)
1.5
1.95
ID = 0.5 A, VGS = 4 V
Note 3
Static drain to source on state resistance
RDS (on)
1.9
2.5
ID = 0.5 A, VGS = 2.5 V
Note 3
Forward transfer admittance
|yfs|
0.8
1.4
S
ID = 0.5 A, VDS = 10 V
Note 3
Input capacitance
Ciss
98
pF
Output capacitance
Coss
31
pF
Reverse transfer capacitance
Crss
14
pF
VDS = 10 V
VGS = 0
f = 1 MHz
Total gate charge
Qg
3.5
nC
Gate to source charge
Qgs
0.5
nC
Gate to drain charge
Qgd
1.8
nC
VDD = 100 V
VGS = 4 V
ID = 1 A
Turn-on delay time
td (on)
8
ns
Rise time
tr
12
ns
Turn-off delay time
td (off)
34
ns
Fall time
tf
19
ns
VGS = 4 V
ID = 0.5 A
RL = 60
Body-drain diode forward voltage
VDF
1.0
1.5
V
IF = 1 A, VGS = 0
Body-drain diode reverse recovery time
trr
60
ns
IF = 1 A, VGS = 0
diF/dt = 100 A/
µs
Note:
3. Pulse test


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