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2SC4367TZ-E Arkusz danych(PDF) 3 Page - Renesas Technology Corp |
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2SC4367TZ-E Arkusz danych(HTML) 3 Page - Renesas Technology Corp |
3 / 6 page 2SC4367 Rev.2.00 Aug 10, 2005 page 3 of 5 Main Characteristics 150 100 50 Ambient Temperature Ta (°C) 0 600 400 200 Maximum Collector Dissipation Curve 12 16 10 8 4 Collector to Emitter Voltage VCE (V) 0 30 24 18 12 6 Typical Output Characteristics IB = 20 µA 40 60 80 100 120 140 0.2 0.4 0.6 0.8 1.0 0 Base to Emitter Voltage VBE (V) 100 50 20 10 5 2 1 Typical Transfer Characteristics VCE = 10 V Pulse 12 10 5 20 100 50 Collector Current IC (mA) 1,000 500 200 100 50 20 10 DC Current Transfer Ratio vs. Collector Current Ta = 75 °C 25 –25 VCE = 10 V Pulse 120 50 10 100 5 2 Collector Current IC (mA) 10 1.0 0.1 0.01 Collector to Emitter Saturation Voltage vs. Collector Current IC = 10 IB Pulse Ta = –25 °C 25 75 12 10 5 20 100 50 Collector Current IC (mA) 10,000 1,000 100 Gain Bandwidth Product vs. Collector Current VCE = 10 V Pulse |
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