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2SC4367TZ-E Arkusz danych(PDF) 3 Page - Renesas Technology Corp

Numer części 2SC4367TZ-E
Szczegółowy opis  Silicon NPN Epitaxial
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4367TZ-E Arkusz danych(HTML) 3 Page - Renesas Technology Corp

  2SC4367TZ-E Datasheet HTML 1Page - Renesas Technology Corp 2SC4367TZ-E Datasheet HTML 2Page - Renesas Technology Corp 2SC4367TZ-E Datasheet HTML 3Page - Renesas Technology Corp 2SC4367TZ-E Datasheet HTML 4Page - Renesas Technology Corp 2SC4367TZ-E Datasheet HTML 5Page - Renesas Technology Corp 2SC4367TZ-E Datasheet HTML 6Page - Renesas Technology Corp  
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2SC4367
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
150
100
50
Ambient Temperature Ta (°C)
0
600
400
200
Maximum Collector Dissipation Curve
12
16
10
8
4
Collector to Emitter Voltage VCE (V)
0
30
24
18
12
6
Typical Output Characteristics
IB = 20 µA
40
60
80
100
120
140
0.2
0.4
0.6
0.8
1.0
0
Base to Emitter Voltage VBE (V)
100
50
20
10
5
2
1
Typical Transfer Characteristics
VCE = 10 V
Pulse
12
10
5
20
100
50
Collector Current IC (mA)
1,000
500
200
100
50
20
10
DC Current Transfer Ratio vs.
Collector Current
Ta = 75
°C
25
–25
VCE = 10 V
Pulse
120
50
10
100
5
2
Collector Current IC (mA)
10
1.0
0.1
0.01
Collector to Emitter Saturation Voltage vs.
Collector Current
IC = 10 IB
Pulse
Ta = –25
°C
25
75
12
10
5
20
100
50
Collector Current IC (mA)
10,000
1,000
100
Gain Bandwidth Product vs. Collector Current
VCE = 10 V
Pulse


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