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2SD974 Arkusz danych(PDF) 2 Page - Renesas Technology Corp |
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2SD974 Arkusz danych(HTML) 2 Page - Renesas Technology Corp |
2 / 6 page 2SD974 Rev.3.00 Oct 06, 2006 page 2 of 5 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 120 — — V IC = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 60 — — V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V IE = 10 µA, IC = 0 Collector cutoff current ICBO — — 1.0 µA VCB = 100 V, IE = 0 DC current transfer ratio hFE 150 — — VCE = 5 V, IC = 1 A* 1 Collector to emitter saturation voltage VCE(sat) — — 0.3 V IC = 1 A, IB = 0.05 A* 1 Base to emitter saturation voltage VBE(sat) — — 1.2 V Fall time tf — 0.4 — pF ICP = 1 A, IB1 = –IB2 = 50 mA* 1 Note: 1. Pulse test |
Podobny numer części - 2SD974 |
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Podobny opis - 2SD974 |
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