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2SD1306NETL-E Arkusz danych(PDF) 3 Page - Renesas Technology Corp |
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2SD1306NETL-E Arkusz danych(HTML) 3 Page - Renesas Technology Corp |
3 / 6 page 2SD1306 Rev.2.00 Aug 10, 2005 page 3 of 5 Main Characteristics 0 50 100 150 50 Ambient Temperature Ta (°C) Maximum Collector Dissipation Curve 100 150 28 610 4 Collector to Emitter Voltage VCE (V) 0 10 8 6 4 2 Typical Output Characteristics 15.0 12.5 10.0 7.5 5.0 IB = 2.5 µA 0.2 0.8 0.6 1.0 0.4 Collector to Emitter Voltage VCE (V) 0 100 80 60 40 20 Typical Output Characteristics 160 140 120 100 80 60 40 IB = 20 µA 1.0 0.20.4 0.60.8 Base to Emitter Voltage VBE (V) 0 10 6 4 2 8 Typical Transfer Characteristics VCE = 1 V 1000 100 10 300 30 3 Collector current IC (mA) 1 1,000 300 100 30 10 3 1 DC Current Transfer Ratio vs. Collector Current VCE = 1 V Pulse 3 10 1,000 300 100 130 Collector Current IC (mA) 1,000 300 100 30 10 3 1 Saturation Voltage vs. Collector Current VBE(sat) IC/IB = 10 Pulse VCE(sat) |
Podobny numer części - 2SD1306NETL-E |
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Podobny opis - 2SD1306NETL-E |
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