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STP150NF55 Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części STP150NF55
Szczegółowy opis  N-channel 55V - 0.005廓 - 120A - D2PAK/TO-220/TO-247 STripFET??II Power MOSFET
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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STB150NF55 - STP150NF55 - STW150NF55
Electrical ratings
3/19
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
55
V
VDGR
Drain-gate voltage (RGS = 20 kΩ)55
V
VGS
Gate- source voltage
± 20
V
ID
(1)
1.
Value limited by wire bonding
Drain current (continuous) at TC = 25°C
120
A
ID
(1)
Drain current (continuous) at TC = 100°C
106
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
480
A
Ptot
Total dissipation at TC = 25°C
300
W
Derating Factor
2
W/°C
dv/dt (3)
3.
ISD ≤120A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Peak diode recovery voltage slope
8
V/ns
EAS
(4)
4.
Starting Tj = 25 °C, ID = 60A, VDD = 30V
Single pulse avalanche energy
850
mJ
Tstg
Storage temperature
-55 to 175
°C
Tj
Max. operating junction temperature
Table 2.
Thermal data
TO-220
D2PAK
TO-247
Rthj-case Thermal resistance junction-case max
0.5
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
--
50
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
see Figure 15 and Figure 16
°C/W
TJ
Maximum lead temperature for soldering
purpose(1)
1.
for 10 sec. 1.6mm from case
300
°C


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