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2SJ186 Arkusz danych(PDF) 4 Page - Renesas Technology Corp |
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2SJ186 Arkusz danych(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SJ186 Rev.2.00 Sep 07, 2005 page 4 of 6 24 –40 0 40 80 120 160 Case Temperature Tc (°C) 4 8 12 16 20 Static Drain to Source on State Resistance vs. Temperature Pulse Test VGS = –10 V ID = –0.2 A –0.5 A –1 A Forward Transfer Admittance vs. Drain Current Drain Current ID (A) 1 0.5 0.1 0.2 0.05 0.01 0.02 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1 Tc = –25°C 75°C VDS = –20 V Pulse Test 25°C Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1 1000 500 200 50 100 20 10 Pulse Test Ta = 25°C di / dt = 50 A / µs VGS = 0 0 –10 –20 –30 –40 –50 Drain to Source Voltage VDS (V) Capacitance vs. Drain to Source Voltage 1000 300 100 30 10 3 1 Ciss Coss Crss VGS = 0 f = 1 MHz 0 0 Gate Charge Qg (nc) 0 –20 –16 –12 –8 –4 –1000 –800 –600 –400 –200 Dynamic Input Characteristics 24 6 8 10 VDS VGS ID = –0.5 A 100 50 20 5 10 2 1 –0.02 –0.05 –0.1 –0.2 –0.5 –1 –0.01 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics VDD = –100 V –150 V –200 V VDD = –200 V –150 V –100 V VGS = –10 V, VDD = –30 V PW = 2 µs, duty ≤ 1 % |
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