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2SJ484 Arkusz danych(PDF) 4 Page - Renesas Technology Corp |
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2SJ484 Arkusz danych(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SJ484 Rev.3.00 Sep 07, 2005 page 4 of 6 0.5 –40 0 40 80 120 160 Case Temperature Tc (°C) 0 0.1 0.2 0.3 0.4 Static Drain to Source on State Resistance vs. Temperature Pulse Test ID = –2 A ID = –2 A Forward Transfer Admittance vs. Drain Current Drain Current ID (A) 5 0.5 1 2 0.05 0.1 0.2 –0.01 –0.02 –0.05 –0.1 –1 –0.5 –0.2 –5 –2 Tc = –25°C 75°C VDS = –10 V Pulse Test 25°C Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time –0.1 –0.2 –0.5 –1 –2 –5 –10 500 200 50 100 20 5 10 di / dt = 50 A / µs VGS = 0, Ta = 25°C 0 –10 –20 –30 –40 –50 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 1000 500 200 100 50 20 10 Ciss Coss Crss VGS = 0 f = 1 MHz 0 0 Gate Charge Qg (nc) 0 –20 –16 –12 –8 –4 –50 –40 –30 –20 –10 Dynamic Input Characteristics 4 8 12 16 20 VDS VGS 500 200 100 20 50 10 5 –0.2 –0.5 –1 –2 –5 –10 –0.1 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics VDD = –5 V –10 V –25 V VDD = –5 V –10 V –25 V VGS = –10 V –0.5 A, –1.0 A VGS = –10 V, VDD = –10 V duty ≤ 1 % |
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