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2SJ484 Arkusz danych(PDF) 4 Page - Renesas Technology Corp

Numer części 2SJ484
Szczegółowy opis  Silicon P Channel MOS FET
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ484 Arkusz danych(HTML) 4 Page - Renesas Technology Corp

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2SJ484
Rev.3.00 Sep 07, 2005 page 4 of 6
0.5
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
0.1
0.2
0.3
0.4
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
ID = –2 A
ID = –2 A
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
5
0.5
1
2
0.05
0.1
0.2
–0.01 –0.02 –0.05 –0.1
–1
–0.5
–0.2
–5
–2
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Body-Drain Diode Reverse
Recovery Time
–0.1
–0.2
–0.5
–1
–2
–5
–10
500
200
50
100
20
5
10
di / dt = 50 A /
µs
VGS = 0, Ta = 25°C
0
–10
–20
–30
–40
–50
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
1000
500
200
100
50
20
10
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
0
Gate Charge
Qg (nc)
0
–20
–16
–12
–8
–4
–50
–40
–30
–20
–10
Dynamic Input Characteristics
4
8
12
16
20
VDS
VGS
500
200
100
20
50
10
5
–0.2
–0.5
–1
–2
–5
–10
–0.1
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching Characteristics
VDD = –5 V
–10 V
–25 V
VDD = –5 V
–10 V
–25 V
VGS = –10 V
–0.5 A, –1.0 A
VGS = –10 V, VDD = –10 V
duty
≤ 1 %


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