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2SJ479STL-E Arkusz danych(PDF) 3 Page - Renesas Technology Corp |
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3 / 8 page 2SJ479(L), 2SJ479(S) Rev.3.00 Jun 05, 2006 page 3 of 7 Main Characteristics Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics –50 0 –10 –20 –30 –40 0–2 –4 –6 –8 –10 –50 0 –10 –20 –30 –40 0 –1–2–3–4–5 Tc = –25°C 100 0 25 50 75 0 50 100 150 200 VDS = –10 V Pulse Test –10 V –6 V –5 V –4 V –3 V –4.5 V –3.5 V VGS = –2.5 V Pulse Test Drain to Source Voltage VDS (V) Maximum Safe Operation Area –300 –100 –10 –30 –1 –3 –0.5 –0.1 –0.3 –1 –3 –10 –30 –100 –500 Ta = 25°C 10 µs Operation in this area is limited by RDS (on) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –1.0 0 –0.2 –0.4 –0.6 –0.8 0 –4 –8 –12 –16 –20 Pulse Test ID = –20 A –10 A –5 A Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 0.1 0.05 0.02 0.01 –2 –10 –20 –1 –5 –50 0.5 0.2 VGS = –4 V –10 V Pulse Test 75°C 25°C |
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