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2SK3147L-E Arkusz danych(PDF) 4 Page - Renesas Technology Corp |
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2SK3147L-E Arkusz danych(HTML) 4 Page - Renesas Technology Corp |
4 / 9 page 2SK3147(L), 2SK3147(S) Rev.2.00 Sep 07, 2005 page 4 of 8 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) 0.50 0.40 0.30 0.20 0.10 –40 0 40 80 120 160 0 0.1 0.3 1 3 10 30 100 50 20 5 10 1 2 0.5 VGS = 4 V 10 V 1, 2 A 5 A 25 °C Tc = –25 °C 75 °C Pulse Test VDS = 10 V Pulse Test 1, 2 A 5 A 0.1 0.3 1 3 10 30 100 010 20 30 40 50 2000 5000 1000 100 200 500 200 160 120 80 40 0 20 16 12 8 4 8 1624 3240 0 1000 500 50 100 20 10 200 500 300 30 100 3 10 1 0.1 0.3 1 3 10 30 100 di / dt = 50 A / µs VGS = 0, Ta = 25°C 10 20 50 VGS = 0 f = 1 MHz Ciss Coss Crss ID = 5 A VGS VDS VDD = 100 V 50 V 25 V VDD = 100 V 50 V 25 V tf tr td(on) td(off) VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % |
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