2SK3157-E datasheet(4/8 Pages) RENESAS

Numer części	2SK3157-E

Szczegółowy opis	Silicon N Channel MOS FET High Speed Power Switching

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Producent	RENESAS [Renesas Technology Corp]

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4 / 8 page

2SK3157

Rev.3.00 Sep 07, 2005 page 4 of 7

Case Temperature TC (°C)

Static Drain to Source on State

Resistance vs. Temperature

Forward Transfer Admittance

vs. Drain Current

Drain Current ID (A)

Body to Drain Diode Reverse

Recovery Time

Reverse Drain Current IDR (A)

Typical Capacitance

vs. Drain to Source Voltage

Drain to Source Voltage VDS (V)

Dynamic Input Characteristics

Gate Charge Qg (nc)

Switching Characteristics

Drain Current ID (A)

250

200

150

100

50

–40

0

40

80

120

160

0

0.1 0.2

1

520

30

1

3

0.3

0.1

Pulse Test

10

ID = 20 A

VGS = 4 V

10 V

20 A

5, 10 A

100

0.5

2

50 100

VDS = 10 V

Pulse Test

25

°C

Tc = –25

°C

75

°C

5, 10 A

0.1

1

3

10

100

0.3

30

010

20

30

40

50

10000

1000

3000

300

10

30

100

200

160

120

80

40

0

20

16

12

8

4

40

80

120

160

200

0

5000

500

200

100

50

0.1 0.2

1

510

1000

200

100

20

50

10

500

ID = 20 A

VGS

VDS

20

10

0.5

2

20

VDD = 100 V

50 V

25 V

VDD = 100 V

50 V

25 V

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

1000

tr

VGS = 10 V, VDD = 30 V

PW = 5

µs, duty < 1 %

tf

td(on)

td(off)

50

2000

di / dt = 50 A /

µs

VGS = 0, Ta = 25°C

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