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STS6PF30L Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części STS6PF30L
Szczegółowy opis  P-CHANNEL 30V - 0.027 ohm - 6A SO-8 STripFET™ POWER MOSFET
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STS6PF30L Arkusz danych(HTML) 3 Page - STMicroelectronics

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STS6PF30L
SWITCHING ON(*)
SWITCHING OFF(*)
SOURCE DRAIN DIODE(*)
(*)Pulse width
[ 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by TJMAX
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V
ID = 3 A
RG = 4.7 Ω
VGS = 5 V
(Resistive Load, Figure 1)
62
140
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 24V ID= 6A VGS=5V
(see test circuit, Figure 2)
21
3.9
8.6
28
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 24 V
ID = 3 A
RG = 4.7Ω,
VGS = 5 V
(Resistive Load, Figure 1)
57
19
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM ()
Source-drain Current
Source-drain Current (pulsed)
6
4
A
A
VSD (*)
Forward On Voltage
ISD = 6 A
VGS = 0
1.2
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 6 A
di/dt = 100A/µs
VDD = 15 V
Tj = 150°C
(see test circuit, Figure 3)
37
46.3
2.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance


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