2SJ527S datasheet(2/9 Pages) RENESAS

Numer części	2SJ527S

Szczegółowy opis	Silicon P Channel MOS FET

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Producent	RENESAS [Renesas Technology Corp]

Strona internetowa	http://www.renesas.com

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2 / 9 page

2SJ527(L), 2SJ527(S)

Rev.3.00 Sep 07, 2005 page 2 of 8

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Drain to source voltage

VDSS

–60

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

–5

A

Drain peak current

ID (pulse)

Note 1

–20

A

Body to drain diode reverse drain current

IDR

–5

A

Avalanche current

IAP

Note 3

–5

A

Avalanche energy

EAR

Note 3

2.1

mJ

Channel dissipation

Pch

Note 2

20

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25

°C

3. Value at Tch = 25

°C, Rg ≥ 50 Ω

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V (BR) DSS

–60

—

V

ID = –10 mA, VGS = 0

Gate to source breakdown voltage

V (BR) GSS

±20

—

V

IG =

±100 µA, VDS = 0

Zero gate voltage drain current

IDSS

—

–10

µA

VDS = –60 V, VGS = 0

Gate to source leak current

IGSS

—

±10

µA

VGS =

±16 V, VDS = 0

Gate to source cutoff voltage

VGS (off)

–1.0

—

–2.0

V

ID = –1 mA, VDS = –10 V

Static drain to source on state resistance

RDS (on)

—

0.3

0.4

Ω

ID = –3 A, VGS = –10 V

Note 4

Static drain to source on state resistance

RDS (on)

—

0.5

0.8

Ω

ID = –3 A, VGS = –4 V

Note 4

Forward transfer admittance

|yfs|

1.8

3

—

S

ID = –3 A, VDS = –10 V

Note 4

Input capacitance

Ciss

—

220

—

pF

Output capacitance

Coss

—

110

—

pF

Reverse transfer capacitance

Crss

—

35

—

pF

VDS = –10 V

VGS = 0

f = 1 MHz

Turn-on delay time

td (on)

—

10

—

ns

Rise time

tr

—

30

—

ns

Turn-off delay time

td (off)

—

45

—

ns

Fall time

tf

—

35

—

ns

VGS = –10 V

ID = –3 A

RL = 10

Ω

Body to drain diode forward voltage

VDF

—

–1.35

—

V

IF = –5 A, VGS = 0

Body to drain diode reverse recovery time

trr

—

55

—

ns

IF = –5 A, VGS = 0

diF/dt = 50 A/

µs

Note:

4. Pulse test

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