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2SA1031 Arkusz danych(PDF) 5 Page - Renesas Technology Corp

Numer części 2SA1031
Szczegółowy opis  Silicon PNP Epitaxial
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SA1031 Arkusz danych(HTML) 5 Page - Renesas Technology Corp

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2SA1031, 2SA1032
3
Electrical Characteristics (Ta = 25
°C)
2SA1031
2SA1032
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–30
–55
V
I
C = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–30
–50
V
I
C = –1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
–5
V
I
E = –10 µA, IC = 0
Collector cutoff current
I
CBO
–0.5
–0.5
µAV
CB = –18 V, IE = 0
Emitter cutoff current
I
EBO
–0.5
–0.5
µAV
EB = –2 V, IC = 0
DC current trnsfer ratio
h
FE*
1
100
500
100
320
V
CE = –12 V,
I
C = –2 mA
Base to emitter voltage
V
BE
–0.8
–0.8
V
V
CE = –12 V,
I
C = –2 mA
Collector to emitter
saturation voltage
V
CE(sat)
–0.2
–0.2
V
I
C = –10 mA,
I
B = –1 mA
Gain bandwidth product f
T
200
280
200
280
MHz
V
CE = –12 V,
I
C = –2 mA
Collector output
capacitance
Cob
3.3
4.0
3.3
4.0
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Noise figure
NF
5
5
dB
V
CE = –6 V,
I
C = –0.1 mA,
R
g = 500 Ω,
f = 120 Hz
Note:
1. The 2SA1031 and 2SA1032 are grouped by h
FE as follows.
BC
D
2SA1031
100 to 200
160 to 320
250 to 500
2SA1032
100 to 200
160 to 320


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