STU8NB90 datasheet(3/5 Pages) STMICROELECTRONICS

Numer części	STU8NB90

Szczegółowy opis	N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET

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Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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3 / 5 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Time

Rise Time

VDD = 450 V

ID =4.5 A

RG = 4.7

Ω

VGS = 10 V

30

13

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 720 V

ID = 9 A VGS = 10 V

64

16

26

nC

SWITCHING OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD = 720 V

ID = 9 A

RG = 4.7

Ω VGS = 10 V

26

35

ns

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM(

•)

Source-drain Current

(pulsed)

8.9

35

A

VSD (

∗)

Forward On Voltage

ISD = 8.9 A

VGS = 0

1.6

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 9 A

di/dt = 100 A/

µs

VDD = 100 V

Tj = 150

o C

1000

11

23

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

STSTU8NB90

3/5

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