2SJ574 datasheet(7/10 Pages) RENESAS

Numer części	2SJ574

Szczegółowy opis	Silicon P Channel MOS FET High Speed Switching

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Producent	RENESAS [Renesas Technology Corp]

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7 / 10 page

2SJ574

5

-0.5

-0.4

-0.3

-0.2

-0.1

0

-0.4

-0.8

-1.2

-1.6

-2.0

V

= 0,5V

GS

Pulse Test

-10 V

Switching Characteristics

Source to Drain Voltage

V

(V)

SD

Reverse Drain Current vs.

Source to Drain Voltage

-5 V

Typical Capacitance vs.

Drain to Source Voltage

1

-0.1

Drain Current

I

(A)

D

-0.2

-0.5

-1.0

2

5

10

20

50

100

200

500

1000

Drain to Source Voltage V

(V)

DS

100

10

20

50

1

2

5

0

-10

-20

-30

-40

-50

Ciss

Coss

Crss

V

= 0

f = 1 MHz

GS

V

= -4 V, V

= -10 V

PW = 5 µs, duty < 1 %

t f

r

t

d(on)

t

d(off)

t

GS

DD

Podobny numer części - 2SJ574

Producent	Numer części	Arkusz danych	Szczegółowy opis
Hitachi Semiconductor	2SJ574	39Kb / 8P	Silicon P Channel MOS FET High Speed Switching
VBsemi Electronics Co.,...	2SJ574	980Kb / 7P	P-Channel 60 V (D-S) MOSFET
	2SJ574BP91TL	980Kb / 7P	P-Channel 60 V (D-S) MOSFET
	2SJ574BPTL	980Kb / 7P	P-Channel 60 V (D-S) MOSFET
Renesas Technology Corp	2SJ574	99Kb / 7P	Silicon P Channel MOS FET High Speed Switching

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Podobny opis - 2SJ574

Producent	Numer części	Arkusz danych	Szczegółowy opis
Hitachi Semiconductor	2SJ576	27Kb / 5P	Silicon P Channel MOS FET High Speed Switching
	2SJ574	39Kb / 8P	Silicon P Channel MOS FET High Speed Switching
	2SJ588	26Kb / 5P	Silicon P Channel MOS FET High Speed Switching
	2SJ575	39Kb / 8P	Silicon P Channel MOS FET High Speed Switching
	2SJ587	39Kb / 8P	Silicon P Channel MOS FET High Speed Switching
Renesas Technology Corp	2SJ575	167Kb / 10P	Silicon P Channel MOS FET High Speed Switching
	2SJ574	244Kb / 8P	Silicon P Channel MOS FET High Speed Switching
	2SJ586	158Kb / 10P	Silicon P Channel MOS FET High Speed Switching
	2SJ574	99Kb / 7P	Silicon P Channel MOS FET High Speed Switching
	2SJ576	46Kb / 7P	Silicon P Channel MOS FET High Speed Switching

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