2SJ586 datasheet(4/10 Pages) RENESAS

Numer części	2SJ586

Szczegółowy opis	Silicon P Channel MOS FET High Speed Switching

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2SJ586

2

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

V

DSS

-20

V

Gate to source voltage

V

GSS

±10

V

Drain current

I

D

-100

mA

Drain peak current

I

D(pulse)

Note1

-400

mA

Body-drain diode reverse drain current

I

DR

-100

mA

Channel dissipation

Pch

Note 2

300

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5x 20 x0.7 mm)

Electrical Characteristics (Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

V

(BR)DSS

-20

—

V

I

D = -100 µA, VGS = 0

Gate to source breakdown

voltage

V

(BR)GSS

±10

—

V

I

G = ±100 µA, VDS = 0

Gate to source leak current

I

GSS

——

±5

µAV

GS = ±8 V, VDS = 0

Zero gate voltege drain

current

I

DSS

——-1

µAV

DS = -20 V, VGS = 0

Gate to source cutoff voltage

V

GS(off)

-0.8

—

-1.8

V

I

D = -10µA, VDS = -5 V

Static drain to source on state R

DS(on)

—

4.1

5.0

Ω

I

D = -50 mA,VGS = -4 V

Note 3

resistance

R

DS(on)

—

6.0

8.5

Ω

I

D = -50 mA,VGS = -2.5 V

Note 3

Forward transfer admittance

|y

fs|

94

144

—

mS

I

D = -50 mA, VDS = -10 V

Note 3

Input capacitance

Ciss

—

28

—

pF

V

DS = -10 V

Output capacitance

Coss

—

21

—

pF

V

GS = 0

Reverse transfer capacitance Crss

—

7

—

pF

f = 1 MHz

Turn-on delay time

t

d(on)

—

30—ns

I

D = -50 mA, VGS = -4 V

Rise time

t

r

—

90—ns

R

L = 200 Ω

Turn-off delay time

t

d(off)

—

87—ns

Fall time

t

f

—

97—ns

Note:

3. Pulse test

4. Marking is CP

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