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ADL5802-EVALZ Arkusz danych(PDF) 1 Page - Analog Devices |
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ADL5802-EVALZ Arkusz danych(HTML) 1 Page - Analog Devices |
1 / 8 page Dual Channel High-IP3 100MHz – 6GHz Active Mixer Preliminary Technical Data ADL5802 REV. PrA Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 © 2008 Analog Devices, Inc. All rights reserved. FEATURES Dual Channel Up/Down Converter Power Conversion Gain of 1.5dB Wideband RF, LO, and IF ports SSB Noise Figure of 11dB SSB NF with +10dBm blocker of 20dB Input IP3 of 27dBm Input P1dB of 12 dBm Typical LO Drive of 0 dBm -40dBm LO Leakage at RF Low Current Operation: 5 V @ 200 mA Adjustable Bias for Low Power Operation Exposed Paddle 4 x 4 mm, 24 Lead LFCSP Package APPLICATIONS Cellular Base Station Receivers Main and Diversity Receiver Designs Radio Link Downconverters GENERAL DESCRIPTION The ADL5802 utilizes high linearity doubly balanced active mixer cores with integrated LO buffer amplifiers to provide high dynamic range frequency conversion from 100MHz to 6GHz. The mixers benefit from a proprietary linearization architecture which provides enhanced IP3 performance when subject to high input levels. A bias adjust feature allows the input linearity, SSB Noise Figure, and DC current to be optimized using a single control pin. The high input linearity allows the device to be used in demanding cellular applications where in-band blocking signals may otherwise result in degradation in dynamic performance. The balanced active mixer arrangement provides superb LO to RF and LO to IF leakage, typically better than -40dBm. The IF outputs are internally terminated to a 200-Ω source impedance and provide a typical voltage conversion gain of 7.5 dB when loaded into a 200-Ω load. Figure 1. Functional Block Diagram The ADL5802 is fabricated using a SiGe high performance IC process. The device is available in a compact 4mm x 4mm 24- lead LFCSP package and operates over a −40°C to +85°C temperature range. An evaluation board is also available. |
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