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1N4151WS-V Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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1N4151WS-V Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 6 page 1N4151WS-V Document Number 85847 Rev. 1.3, 17-May-06 Vishay Semiconductors www.vishay.com 3 Typical Characteristics Tamb = 25 °C, unless otherwise specified Figure 1. Forward Current vs. Forward Voltage Figure 2. Dynamic Forward Resistance vs. Forward Current Figure 3. Admissible Power Dissipation vs. Ambient Temperature 18742 1000 100 10 1 0.1 0.01 0 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.2 V - Forward Voltage (V) =100 °C Tj 25 °C F 18662 1 10 100 1000 10000 110 0.1 0.01 100 IF - Forward Current (mA) =25 °C Tj f=1kHz 200 18743 Tamb - Ambient Temperature (°C) 1000 800 600 400 200 20 40 60 80 100 120 140 160180 0 0 Figure 4. Relative Capacitance vs. Reverse Voltage Figure 5. Leakage Current vs. Junction Temperature 18664 246 8 0 1.1 1.0 0.9 0.8 0.7 10 VR - Reverse Voltage (V) =25 °C Tj f=1MHz 1 18744 10 100 1000 10000 020 4060 80 100 120 140 160 180 200 Tj - Junction Temperature (°C) =50 V VR |
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