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1N4448WS-V-GS08 Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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1N4448WS-V-GS08 Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number 81387 Rev. 1.0, 04-Sep-06 1N4448WS-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified 1) Valid provided that electrodes are kept at ambient temperature. Electrical Characteristics Tamb = 25 °C, unless otherwise specified Rectification Efficiency Measurement Circuit Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air RthJA 6501) K/W Junction temperature Tj 150 °C Storage temperature Tstg - 65 to + 150 °C Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 5 mA VF 620 720 mV IF = 100 mA VF 1000 mV Leakage current VR = 20 V IR 25 nA VR = 75 V IR 5µA VR = 20 V, Tj = 150 °C IR 50 µA Diode capacitance VF = VR = 0 V CD 4pF Reverse recovery time IF = 10 mA, IR = 1 mA, VR = 6 V, RL = 100 Ω trr 4ns Rectification efficiency f = 100 MHz, VRF = 2 V ην 0.45 17436 60 Ω 5k Ω 2nF VO V =2 V RF |
Podobny numer części - 1N4448WS-V-GS08 |
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Podobny opis - 1N4448WS-V-GS08 |
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