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1N4448W-V-GS08 Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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1N4448W-V-GS08 Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 6 page 1N4448W-V Document Number 85722 Rev. 1.3, 12-Dec-05 Vishay Semiconductors www.vishay.com 3 Typical Characteristics (Tamb = 25 °C unless otherwise specified) Figure 1. Forward characteristics Figure 2. Dynamic Forward Resistance vs. Forward Current Figure 3. Admissible Power Dissipation vs. Ambient Temperature 18105 17438 17439 Figure 4. Relative Capacitance vs. Reverse Voltage Figure 5. Leakage Current vs. Junction Temperature 17440 17441 |
Podobny numer części - 1N4448W-V-GS08 |
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Podobny opis - 1N4448W-V-GS08 |
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