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IRF9Z14SPBF Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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IRF9Z14SPBF Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91089 2 S-Pending-Rev. A, 02-Jun-08 IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 3.6 mH, RG = 25 Ω, IAS = - 6.7 A (see fig. 12). c. ISD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. e. Uses IRF9Z14/SiHF9Z14 data and test conditions. Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Peak Diode Recovery dV/dtc, e dV/dt - 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient (PCB Mounted, steady-state)a RthJA -40 °C/W Maximum Junction-to-Case (Drain) RthJC -3.5 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 60 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = - 1 mAc - - 0.06 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - - - 100 µA VDS = - 48 V, VGS = 0 V, TJ = 150 °C - - - 500 Drain-Source On-State Resistance RDS(on) VGS = - 10 V ID = - 4.0 Ab -- 0.5 Ω Forward Transconductance gfs VDS = - 25 V, ID = - 4.0 Ac 1.4 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5c - 270 - pF Output Capacitance Coss - 170 - Reverse Transfer Capacitance Crss -31 - Total Gate Charge Qg VGS = - 10 V ID = - 6.7 A, VDS = - 48 V, see fig. 6 and 13b, c -- 12 nC Gate-Source Charge Qgs -- 3.8 Gate-Drain Charge Qgd -- 5.1 Turn-On Delay Time td(on) VDD = - 30 V, ID = - 6.7 A, RG = 24 Ω, RD = 4.0 Ω, see fig. 10b -11 - ns Rise Time tr -63 - Turn-Off Delay Time td(off) -10 - Fall Time tf -31 - Internal Source Inductance LS Between lead, and center of die contact - 7.5 - nH Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- - 6.7 A Pulsed Diode Forward Currenta ISM -- - 27 Body Diode Voltage VSD TJ = 25 °C, IS = - 6.7 A, VGS = 0 Vb -- - 5.5 V S D G |
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