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IRF644NPBF Arkusz danych(PDF) 6 Page - Vishay Siliconix |
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IRF644NPBF Arkusz danych(HTML) 6 Page - Vishay Siliconix |
6 / 8 page www.vishay.com Document Number: 91038 6 S-Pending-Rev. A, 19-Jun-08 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Notes: 1. Duty factor D= t1 / t2 2. Peak TJ = PDM x ZthJC + TC P t t DM 1 2 t1, Rectangular Pulse Duration (sec) SINGLE PULSE (THERMAL RESPONSE) 0.00001 0.001 0.001 0.01 0.1 1 0.01 0.1 1 10 D= 0.50 0.20 0.10 0.05 0.02 0.01 A R G IAS 0.01 Ω tp D.U.T L VDS + - VDD Driver 15 V 20 V IAS VDS tp Starting TJ, Junction Temperature (° C) 25 50 75 100 125 150 175 0 60 120 180 240 300 ID TOP 3.4A 5.9A BOTTOM 8.4A |
Podobny numer części - IRF644NPBF |
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Podobny opis - IRF644NPBF |
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