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IRF730A Arkusz danych(PDF) 2 Page - Vishay Siliconix

Numer części IRF730A
Szczegółowy opis  Power MOSFET
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IRF730A Arkusz danych(HTML) 2 Page - Vishay Siliconix

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Document Number: 91045
2
S-Pending-Rev. A, 19-Jun-08
IRF730A, SiHF730A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 µs; duty cycle ≤ 2 %.
c. COSS eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Case (Drain)
RthJC
-1.70
°C/W
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Ambient
RthJA
-62
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
400
-
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = 1 mA
-0.5
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.5
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 400 V, VGS = 0 V
-
-
25
µA
VDS = 320 V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 3.3 Ab
--
1.0
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 3.3 A
3.1
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
600
-
pF
Output Capacitance
Coss
-
103
-
Reverse Transfer Capacitance
Crss
-4.0
-
Output Capacitance
Coss
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
-
890
-
VDS = 320 V, f = 1.0 MHz
-
30
-
Effective Output Capacitance
Coss eff.
VDS = 0 V to 320 Vc
-45
-
Total Gate Charge
Qg
VGS = 10 V
ID = 3.5 A, VDS = 320 V
see fig. 6 and 13b
--
22
nC
Gate-Source Charge
Qgs
--
5.8
Gate-Drain Charge
Qgd
--
9.3
Turn-On Delay Time
td(on)
VDD = 200 V, ID = 3.5 A
RG = 12 Ω, RD = 57 Ω,
see fig. 10b
-10
-
ns
Rise Time
tr
-22
-
Turn-Off Delay Time
td(off)
-20
-
Fall Time
tf
-16
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
5.5
A
Pulsed Diode Forward Currenta
ISM
--
22
Body Diode Voltage
VSD
TJ = 25 °C, IS = 5.5 A, VGS = 0 Vb
--
1.6
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 3.5 A, dI/dt = 100 A/µsb
-
370
550
ns
Body Diode Reverse Recovery Charge
Qrr
-1.6
2.4
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
S
D
G


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