Document Number: 91080

www.vishay.com

S-Pending-Rev. A, 20-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRF9610, SiHF9610

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• P-Channel

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

The Power MOSFETs technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of the Power MOSFETs

design achieve very low on-state resistance combined with

high transconductance and extreme device ruggedness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).

b. Not applicable.

d. 1.6 mm from case.

PRODUCT SUMMARY

- 200

3.0

11

7.0

4.0

Configuration

Single

S

G

D

P-Channel MOSFET

TO-220

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-220

Lead (Pb)-free

IRF9610PbF

SiHF9610-E3

SnPb

IRF9610

SiHF9610

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

- 200

V

Gate-Source Voltage

± 20

Continuous Drain Current

- 1.8

A

- 1.0

- 7.0

Linear Derating Factor

0.16

W/°C

Maximum Power Dissipation

20

W

Inductive Current, Clamp

- 7.0

A

dV/dt

- 5.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply