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IRFB17N50L Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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IRFB17N50L Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91098 www.vishay.com S-81263-Rev. A, 21-Jul-08 1 Power MOSFET IRFB17N50L, SiHFB17N50L Vishay Siliconix FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current •Low Trr and Soft Diode Recovery • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • ZVS and High Frequency Circuit • PWM Inverters Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 3.0 mH, RG = 25 Ω, IAS = 16 A (see fig. 12). c. ISD ≤ 16 A, dI/dt ≤ 347 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) (Ω)VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration Single N-Channel MOSFET G D S TO-220 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220 Lead (Pb)-free IRFB17N50LPbF SiHFB17N50L-E3 SnPb IRFB17N50L SiHFB17N50L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 16 A TC = 100 °C 11 Pulsed Drain Currenta IDM 64 Linear Derating Factor 1.8 W/°C Single Pulse Avalanche Energyb EAS 390 mJ Repetitive Avalanche Currenta IAR 16 A Repetitive Avalanche Energya EAR 22 mJ Maximum Power Dissipation TC = 25 °C PD 220 W Peak Diode Recovery dV/dtc dV/dt 13 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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