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IRFP22N60K Arkusz danych(PDF) 7 Page - Vishay Siliconix |
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IRFP22N60K Arkusz danych(HTML) 7 Page - Vishay Siliconix |
7 / 8 page Document Number: 91208 www.vishay.com S-81274-Rev. A, 16-Jun-08 7 IRFP22N60K, SiHFP22N60K Vishay Siliconix Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91208. P.W. Period dI/dt Diode Recovery dV/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period + - + + + - - - * VGS = 5V for Logic Level Devices Peak Diode Recovery dV/dt Test Circuit RG VDD • dV/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * |
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Podobny opis - IRFP22N60K |
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