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IRFP360LCPBF Arkusz danych(PDF) 1 Page - Vishay Siliconix

Numer części IRFP360LCPBF
Szczegółowy opis  Power MOSFET
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Producent  VISHAY [Vishay Siliconix]
Strona internetowa  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Document Number: 91227
www.vishay.com
S-Pending-Rev. A, 24-Jun-08
WORK-IN-PROGRESS
1
Power MOSFET
IRFP360LC, SiHFP360LC
Vishay Siliconix
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V VGS Rating
• Reduced Ciss, Coss, Crss
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over convertional MOSFETs.
Utilizing
advanced
MOSFETs
technology
the
device
improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.
These device improvements combined with the proven
ruggedness and reliability of MOSFETs offer the designer a
new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 4.0 mH, RG = 25 Ω, IAS = 23 A (see fig. 12).
c. ISD ≤ 23 A, dI/dt ≤ 170 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
400
RDS(on) (Ω)VGS = 10 V
0.20
Qg (Max.) (nC)
110
Qgs (nC)
28
Qgd (nC)
45
Configuration
Single
N-Channel MOSFET
G
D
S
TO-247
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-247
Lead (Pb)-free
IRFP360LCPbF
SiHFP360LC-E3
SnPb
IRFP360LC
SiHFP360LC
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
400
V
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
23
A
TC = 100 °C
14
Pulsed Drain Currenta
IDM
91
Linear Derating Factor
2.2
W/°C
Single Pulse Avalanche Energyb
EAS
1200
mJ
Repetitive Avalanche Currenta
IAR
23
A
Repetitive Avalanche Energya
EAR
28
mJ
Maximum Power Dissipation
TC = 25 °C
PD
280
W
Peak Diode Recovery dV/dtc
dV/dt
4.0
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
lbf · in
1.1
N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply


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